The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software.
Table of Contents
Chapter 1 – Introduction to Technology Computer Aided Design Chapter 2 – Basic Semiconductor and Metal-Oxide-Semiconductor (MOS) Physics Chapter 3 – Review of Numerical Methods for Technology Computer Aided Design (TCAD) Chapter 4 – Device Simulation Using ISE-TCAD Chapter 5 – Device Simulation Using Silvaco ATLAS Tool Chapter 6 – Study of Deep Sub-Micron VLSI MOSFETs through TCAD Chapter 7 – MOSFET Characterization for VLSI Circuit Simulation Chapter 8 – Process Simulation of a MOSFET Using TSUPREM-4 and Medici
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